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Ordering number : ENN6796
MCH6615
N-Channel and P-Channel Silicon MOSFETs
MCH6615
Ultrahigh-Speed Switching Applications
Features
*
Package Dimensions
unit : mm 2173
[MCH6615]
0.25
* *
The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting. Low ON-resistance. 2.5V drive.
0.3
0.15
6
5
4
1.6 2.1
1
0.25
23 0.65
2.0
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 10 0.65 2.6 0.8 150 --55 to +150
0.15
0.85
P-channel -30 10 --0.4 --1.6
Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A VDS=10V, ID=150mA ID=150mA, VGS=4V ID=80mA, VGS=2.5V ID=10mA, VGS=1.5V 0.4 400 560 0.9 1.2 2.6 1.2 1.7 5.2 30 10 10 1.3 V A A V mS Symbol Conditions Ratings min typ max Unit
Marking : FP
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM 20101 TS IM TA-2910 No.6796-1/6
MCH6615
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-30V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--100A VDS=-10V, ID=--100mA ID=-100mA, VGS=--4V ID=-50mA, VGS=-2.5V ID=-10mA, VGS=-1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=--10V, ID=--200mA VDS=-10V, VGS=--10V, ID=--200mA VDS=-10V, VGS=--10V, ID=--200mA IS=--200mA, VGS=0 --0.4 210 300 2.4 3.5 10 28 15 5.2 24 75 200 150 2 0.25 0.35 --0.82 --1.2 3.1 4.9 20 --30 --10 10 --1.4 V A A V mS pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA IS=300mA, VGS=0 Ratings min typ 30 15 10 32 110 250 160 2.34 0.38 0.45 0.8 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit [N-channel]
4V 0V VIN VIN VDD=15V ID=150mA RL=100
[P-channel]
0V --4V VIN VIN VDD= --15V ID= --100mA RL=150
PW=10s D.C.1%
D G
VOUT
PW=10s D.C.1%
D G
VOUT
MCH6615 P.G 50 P.G
MCH6615 50
S
S
Electrical Connection
D1 G2 S2
(Top view)
S1
G1
D2
No.6796-2/6
MCH6615
0.30
ID -- VDS
2.5 V
3.5V 4.0V 3.0V
[Nch]
--0.20 --0.18 --0.16
ID -- VDS
0V
--3 .0 V
[Pch]
0.25
6.0V
--4 .
Drain Current, ID -- A
Drain Current, ID -- A
--2 .5 V
2.0
0.20
V
--6.
--0.14 --0.12 --0.10 --0.08 --0.06 --0.04 --0.02
0V
--3.5V
. --2
0V
0.15
VGS=1.5V
0.10
VGS= --1.5V
0.05
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V
0.6
IT00224
ID -- VGS
Drain-to-Source Voltage, VDS -- V
--0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05
IT00237
[Nch]
ID -- VGS
[Pch]
VDS= --10V
25C
75
VDS=10V
0.5
C
Ta= --25 C 75 C
0 --0.5 --1.0 --1.5 --2.0
Ta= --
Drain Current, ID -- A
0.4
0.3
0.2
0.1
Drain Current, ID -- A
25
0 0 0.5 1.0 1.5 2.0 2.5 IT00225
0 --2.5 --3.0 --3.5 IT00238
Gate-to-Source Voltage, VGS -- V
3.0
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
8 7 6 5
[Nch] Ta=25C
RDS(on) -- VGS
25C
C
[Pch]
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) --
2.5
2.0
Static Drain-to-Source On-State Resistance, RDS(on) --
ID= --100mA
4
1.5
ID=150mA 80mA
1.0
--50mA
3 2 1 0
0.5
0 0 1 2 3 4 5 6 7 8 9 10
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
Gate-to-Source Voltage, VGS -- V
10 7
IT00226
Gate-to-Source Voltage, VGS -- V
10
IT00239
RDS(on) -- ID
[Nch] VGS=4V
RDS(on) -- ID
[Pch]
VGS= --4V
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
Static Drain-to-Source On-State Resistance, RDS(on) --
7
5
Ta=75C
1.0 7 5 3 2
3
Ta=75C 25C
--25C 25C
2
--25C
0.1 0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1.0 IT00227
7
1.0 --0.01
2
3
5
7
--0.1
2
3
5 IT00240
Drain Current, ID -- A
No.6796-3/6
MCH6615
10 7
RDS(on) -- ID
[Nch] VGS=2.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
10
RDS(on) -- ID
[Pch] VGS= --2.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
7
5
Ta=75C --25C 25C
Ta=75C 25C
3
1.0 7 5 3 2
--25C
2
0.1 0.01
2
3
5
7
0.1
2
3
5
7
1.0
1.0 --0.01
2
3
5
7
--0.1
2
3
5 IT00241
Drain Current, ID -- A
10
IT00228
RDS(on) -- ID
Drain Current, ID -- A
100 7
[Nch] VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
RDS(on) -- ID
[Pch] VGS= --1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
7
5 3 2
5
Ta=75C
10 7 5 3 2
3
Ta=75C --25C
25C
--25C
2
25C
1.0 0.001
2
3
5
7
0.01
2
3
1.0 --0.001
2
3
5
7
--0.01
2
3
Drain Current, ID -- A
3.0
IT00229
Drain Current, ID -- A
7
IT00242
RDS(on) -- Ta
[Nch]
RDS(on) -- Ta
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) --
2.5
Static Drain-to-Source On-State Resistance, RDS(on) --
6
5
2.0
1.5
1.0
V =2.5 A, VGS 0m I D=8 =4.0V A, V GS =150m ID
4
3
--5 ID=
0m
--2 S= A, V G
.5V
--1 I D=
2
0
, VG 0mA
--4 S=
.0V
0.5
1 0 --60
0 --60
--40
--20
0
20
40
60
80
100
120
140
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
10
IT00230
Ambient Temperature, Ta -- C
1.0
|yfs| -- ID
[Nch]
Forward Transfer Admittance, yfs -- S
yfs -- ID
IT00243
Forward Transfer Admittance, |yfs| -- S
7 5 3 2
VDS=10V
7 5 3 2
[Pch] VDS= --10V
-Ta=
25C
75C
0.1 7 5 3 2
1.0 7 5 3 2
Ta=
C --25
75 C
C 25
25
C
0.1 0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1.0 IT00231
7
0.01 --0.01
2
3
5
7
--0.1
2
3
5 IT00244
Drain Current, ID -- A
No.6796-4/6
MCH6615
1.0 7 5
IF -- VSD
[Nch] VGS=0
--1.0 7 5
IF -- VSD
[Pch]
VGS=0
Forward Current, IF -- A
3 2
Forward Current, IF -- A
3 2
Ta=7 5C 25C --25C
0.1 7 5 3 2
--0.1 7 5 3 2
Ta= 75 C
25C
--0.7
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT00232
--0.01 --0.4
--0.5
--0.6
--25 C
--0.8
--0.9
--1.0 IT00245
Diode Forward Voltage, VSD -- V
1000 7
SW Time -- ID
Diode Forward Voltage, VSD -- V
1000 7
Switching Time, SW Time -- ns
3 2
td(off)
tf tr
Switching Time, SW Time -- ns
5
[Nch] VDD=15V VGS=4V
SW Time -- ID
[Pch]
VDD= --15V VGS= --4V
5 3 2
td(off) tf tr td(on)
100 7 5
100 7 5 3 2
td(on)
3 2
10 0.01
2
3
5
7
0.1
2
3
5 IT00233
10 --0.01
2
3
5
7
--0.1
2
3
100 7 5
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
[Nch] f=1MHz
100 7 5
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
IT00246
[Pch]
f=1MHz
Ciss, Coss, Crss -- pF
3 2
Ciss, Coss, Crss -- pF
Ciss
3 2
Ciss Coss
10 7 5 3 2
Coss Crss
10 7 5 3 2 1.0
Crss
1.0 0 5 10 15 20 25 30 IT00234
0
--5
--10
--15
--20
--25
--30 IT00247
Drain-to-Source Voltage, VDS -- V
10 9
Drain-to-Source Voltage, VDS -- V
--10 --9
VGS -- Qg
VDS=10V ID=300mA
[Nch] VDS= --10V ID= --200mA
VGS -- Qg
[Pch]
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 IT00235
--8 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 IT00248
Total Gate Charge, Qg -- nC
Total Gate Charge, Qg -- nC
No.6796-5/6
MCH6615
5 3 2
ASO
IDP=2.6A <10s
1m s
[Nch]
3 2 --1.0
ASO
IDP= --1.6A <10s 1m s
10 ms
[Pch]
Drain Current, ID -- A
ID=0.65A
DC
10
op
ms
Drain Current, ID -- A
1.0 7 5 3 2 0.1 7 5 3 2
10
7 5 3 2 --0.1 7 5 3 2
ID= --0.4A Operation in this area is limited by RDS(on).
0m
tio
s
10
DC ope rat
Operation in this area is limited by RDS(on).
era
0m
s
n
ion
0.01 0.1
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit
2 3 5 7 1.0 2 3 5 7 10 2 3 5 IT02520 Drain-to-Source Voltage, VDS -- V [Pch, Nch] PD -- Ta
--0.01 --1.0
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit
2 3 5 7 --10 2 3 5 IT02519
Drain-to-Source Voltage, VDS -- V
1.0
Allowable Power Dissipation, PD -- W
0.8
M
ou
nte
do
0.6
na
ce
ram
ic
bo
0.4
ard
(90
0m
m2 !0
.8m
0.2
m)
1u
nit
140 160
0 0 20 40 60 80 100 120
Amibient Tamperature, Ta -- C
IT02521
Note on usage : Since the MCH6615 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice.
PS No.6796-6/6

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